all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 05, 2015-03-04 ptfa092213el ptfa092213fl confidential, limited internal distribution rf characteristics two-carrier wcdma measurements (not subject to production testverifed by design/characterization in infneon test fxture) v dd = 30 v, i dq = 1850 ma, p out = 50 w average, ? 1 = 950 mhz, ? 2 = 960 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 17.5 db drain effciency h d 29 % intermodulation distortion imd C32 dbc thermally-enhanced high power rf ldmos fets 220 w, 920 C 960 mhz description the ptfa092213el and ptfa092213fl are 220-watt, internally- matched ldmos fets designed for use in cellular power amplifer applications in the 920 to 960 mhz band. these devices feature internal i/o matching and thermally-enhanced open-cavity ceramic packages with slotted or earless fanges. manufactured with infneon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptfa092213el package h-33288-6 features ? broadband internal matching ? typical two-carrier wcdma performance at 960 mhz, 30 v - average output power = 50 w - linear gain = 17.5 db - effciency = 29% - intermodulation distortion = C32 dbc - adjacent channel power = C42.5 dbc ? typical cw performance, 960 mhz, 30 v - output power at p 1db = 250 w - linear gain = 17.5 db - effciency = 52% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 30 v, 220 w (cw) output power ? pb-free, rohs-compliant ptfa092213fl package h-34288-4/2 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 30 - 20 - 10 0 10 20 30 40 30 35 40 45 50 output power (dbm) two - carrier wcdma performance v dd = 30 v, i dq = 1850 ma, ? = 960 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, 3.84 mhz bandwidth imd_lower acpr gain imd_upper gain (db) , drain efficiency (%) imd (dbc) , acpr (dbc) efficiency not recommended for new design
data sheet 2 of 10 rev. 05, 2015-03-04 ptfa092213el ptfa092213fl confidential, limited internal distribution rf characteristics (cont.) two-tone measurements (tested in infneon test fxture) v dd = 30 v, i dq = 1850 ma, p out = 200 w pep, ? = 960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17 17.5 db drain effciency h d 40 42 % intermodulation distortion imd C30 C28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.04 w operating gate voltage v ds = 30 v, i dq = 1850 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C0.5 to +12 v junction temperature t j 200 c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70 c, 220 w cw) r qjc 0.23 c/w ordering information type and version package outline package description shipping ptfa092213el v4 h-33288-6 thermally-enhanced, slotted fange, single-ended tray ptfa092213el v4 r250 h-33288-6 thermally-enhanced, slotted fange, single-ended tape & reel, 250 pcs ptfa092213fl v5 h-34288-4/2 thermally-enhanced, earless fange, single-ended tray ptfa092213fl v5 r250 h-34288-4/2 thermally-enhanced, earless fange, single-ended tape & reel, 250 pcs not recommended for new design
ptfa092213el ptfa092213fl confidential, limited internal distribution data sheet 3 of 10 rev. 05, 2015-03-04 typical performance 0 10 20 30 40 50 60 70 13 14 15 16 17 18 19 20 35 40 45 50 55 drain efficiency (%) gain (db) output power (dbm) cw performance gain & efficiency vs. output power v dd = 30 v, i dq = 1.85 a, ? = 960 mhz efficiency gain -40 -35 -30 -25 -20 -15 -10 -5 0 10 15 20 25 30 35 40 45 50 900 910 920 930 940 950 960 970 980 990 return loss (db) frequency (mhz) broadband two-tone gain, efficiency & return loss vs. frequency v dd = 30 v, i dq = 1.85 a, p o ut = 110 w return loss gain efficiency drain efficiency (%), gain (db) 15 16 17 18 19 20 35 40 45 50 55 power gain (db) output power (dbm) power sweep, cw v dd = 30 v, ? = 960 mhz i dq = 1.85 a i dq = 2.6 a i dq = 1.1 a 0 10 20 30 40 50 60 70 14 15 16 17 18 19 20 21 35 40 45 50 55 drain efficiency (%) gain (db) output power (dbm) cw performance gain & efficiency vs. output power v dd = 30 v, i dq = 1.85 a, ? = 960 mhz efficiency gain t ca s e = -10c t ca s e = 25c t ca s e = 90c not recommended for new design
data sheet 4 of 10 rev. 05, 2015-03-04 ptfa092213el ptfa092213fl confidential, limited internal distribution typical performance (cont.) - 70 - 60 - 50 - 40 - 30 - 20 35 40 45 50 55 imd (dbc) output power, pep (dbm) intermodulation distortion vs. output power v dd = 30 v, i dq = 1.85 a, ? 1 = 960 mhz, ? 2 = 959 mhz 5th 7th 3rd order - 80 - 70 - 60 - 50 - 40 - 30 0 10 20 30 40 50 30 35 40 45 50 drain efficiency (%) output power (dbm), avg. is - 95 cdma performance v dd = 30 v, i dq = 1.85 a, ? = 960 mhz adj 750 khz alt 1 1.98 mhz efficiency adj. ch. power ratio (dbc) - 60 - 55 - 50 - 45 - 40 - 35 - 30 0 10 20 30 40 50 60 30 35 40 45 50 imd (dbc) output power (dbm) single - carrier wcdma performance v dd = 30 v, i dq = 1850 ma, ? = 960 mhz, 3gpp wcdma signal, par = 8.5 db, 3.84 mhz bandwidth efficiency imd gain gain (db), efficiency (%) not recommended for new design
r e v . 0 5 , 2 0 1 5 - 0 3 - 0 4
data sheet 6 of 10 rev. 05, 2015-03-04 ptfa092213el ptfa092213fl confidential, limited internal distribution reference circuit reference circuit block diagram for ? = 960 mhz c2 .001f c30 1.7pf c29 1.7pf dut c4 0.001f c9 .01f ? 5 c14 4.8pf c13 4.8pf r5 1.2k ? r1 1.2k ? r4 1.2k ? c5 0.001f c3 0.001f q1 bcp56 r2 1.3k ? qq1 lm7805 c1 0.001f v dd r6 10 ? c11 33pf c7 47pf c10 33pf r8 5.1k ? r7 10 ? ? 1 c12 3.0pf ? 2 ? 3 ? 4 rf_in c6 .01f rf_out c16 10f c18 1f c17 .01f c21 10f 50v c31 33pf c20 10f ? 9 ? 10 ? 11 ? 12 ? 13 c19 10f c22 10f c25 1f c24 .01f c28 10f 50v c27 10f c26 10f v dd ? 7 ? 8 ? 6 r9 10 ? c8 4.7f c15 10f c23 10f r3 1.0k ? a 0 9 2 2 1 3 e f l _ b d _ 0 9 - 0 2 - 2 0 1 0 circuit assembly information 8 3)(/ru3))/ 3 /13)() ppwlfn h u 5rhuv52rfrsshu electrical characteristics at 960 mhz transmission electrical dimensions: l x w (mm) dimensions: l x w (in.) line characteristics l1 0.167 o, 50.1 l2 0.047 o, 38.0 l3 0.039 o, 38.0 l4 0.072 o, 7.8 l5 0.046 o, 7.8 l6 0.163 o, 78.3 l7, l8 0.043 o, 23.5 l9 0.130 o, 8.3 l , 8.3 l , 11.7 l12 0.009 o, 37.0 l13 0.167 o, 50.1 not recommended for new design
r e v . 0 5 , 2 0 1 5 - 0 3 - 0 4
data sheet 8 of 10 rev. 05, 2015-03-04 ptfa092213el ptfa092213fl confidential, limited internal distribution package outline specifcations package h-33288-6 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: a = gate, b = source, c = drain, d = v dd , e, f = n.c. 5. lead thickness: 0.10 + 0.051/C0.025 mm [.004 +0.002/C0.001 inch]. 6. gold plating thickness: 0.25 micron [10 microinch] max. +.254 C. 127 +. 010 C. 005 ] l c d g s c l 19.558.510 [.770.020] 27.940 [1.100] 2x 12.700 [.500] 45 x 2.032 [45 x .080] 4x 1.143 [.045] (4 pls) 9.398 [.370] 9.779 [.385] 34.036 [1.340] 1.016 [.040] 1.575 [.062] (sph) 22.352.200 [.880.008] 4.039 [ .159 2x 22.860 [.900] [.200] (2 pls) c l 4.889.510 [.192.020] 4x r1.524 [r.060] 2x r1.626 [r.064] v e v f 4x 30 h -33288 - 6_ po _02 -18 - 2010 2x 5.080 not recommended for new design
ptfa092213el ptfa092213fl confidential, limited internal distribution data sheet 9 of 10 rev. 05, 2015-03-04 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower 2cemcgg5rgeec fr package h-34288-4/2 ldudp1rwhvxohvvrwhuzlvhvshflh ,whusuhwlphvlrvdwrohudfhvshu60(0 3ulpdulphvlrvduhppowhudwhlphvlrvduhlfhv oowrohudfhvxohvvvshflhrwhuzlvh 3lv udl6 vrxufh dwh9 9 dd . hdwqhvvppq rosodwqjwqhvvpurqpurqpd l c d g c l 19.558.510 [.770.020] 2x 12.700 [.500] 45 x 2.032 [45 x .080] 2x 1.143 [.045] 9.398 [.370] 9.779 [.385] 23.114 [.910] 1.016 [.040] 1.575 [.062] (sph) 22.352.200 [.880.008] 4.039 +.254 -.127 [ .159 +.010 -.005 ] 22.860 [.900] 2x 5.080 [.200] 4.889.510 [.192.020] v v s 2x 30 c 66065-a0003- c743- 01-0027 h- 34288- 4_2 .dwg l c 4x r0.508 +.381 -.127 [ r.020 +.015 -.005 ] not recommended for new design
data sheet 10 of 10 rev. 05, 2015-03-04 edition 201
published by infneon technologies ag 81726 munich, germany ? 2009 infneon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infneon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infneon technologies offce ( www.infneon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infneon technologies offce. infneon technologies components may be used in life-support devices or systems only with the express written approval of infneon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infneon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international ptfa092213el v4/ ptfa092213 fl v5 confdential, limited internal distribution revision history: 2015-03-04 data sheet previous version: 2010-11-04, data sheet page subjects (major changes since last revision) all not recommended for new design not recommended for new design
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